Title :
Growth, structure, and optical properties of GaSb quantum dot by LPE technique
Author :
Qiu, Feng ; Zhang, Ye ; Lv, Y.F. ; Guo, J.H. ; Hu, G.J. ; Sun ; Deng, H.Y. ; Hu, S.H. ; Dai, NingYi ; Zhuang, Q.D. ; Yin, Mei ; Krier, A. ; Zhao, Zhen
Author_Institution :
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
Abstract :
In this paper, we have grown self-assembled GaSb quantum dots (QDs) on GaAs (100) substrate by liquid phase epitaxy (LPE) technique. The surface morphology, density and size distribution of GaSb QDs are investigated by High-Resolution Scanning Electron Microscope and Atomic Force Microscopy, respectively. Cross-sectional transmission electron microscopy is employed to obtain a cross sectional image of single quantum dot and to present the composition of QDs by focused energy dispersive X-ray (EDX). Feature of QDs of room-temperature photoluminescence (PL) spectroscopy is obvious, and the peak of the QDs at ~l.leV is well separated from wetting layer (WL) at ~ 1.34 eV.
Keywords :
III-V semiconductors; X-ray chemical analysis; atomic force microscopy; gallium compounds; liquid phase epitaxial growth; photoluminescence; scanning electron microscopy; self-assembly; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; surface morphology; transmission electron microscopy; EDX; GaAs; GaAs (100) substrate; GaSb; atomic force microscopy; cross-sectional transmission electron microscopy; density; focused energy dispersive X-ray; high-resolution scanning electron microscopy; liquid phase epitaxy; optical properties; quantum dot; room-temperature photoluminescence; self-assembly; size distribution; structural properties; surface morphology; temperature 293 K to 298 K; wetting layer; Epitaxial growth; Gallium arsenide; Liquids; Optics; Physics; Presses; Quantum dots; GaSb QDs; PL spectrum and liquid phase epitaxy; X-TEM;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6465998
