Structural and magnetic properties of Fe2CrSi Heusler Alloy and Tunneling magnetoresistance of its magnetic tunneling junctions

Author

Yu-Pu Wang ; Jin-Jun Qiu ; Hui Lu ; Qi-Jia Yap ; Wen-Hong Wang ; Gu-Chang Han ; Duc-The Ngo ; Kie-Leong Teo

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

215

Lastpage

218

Abstract

We report the magnetic properties, microstructure and surface morphology of epitaxially grown Fe₂CrSi films. Highly ordered B2 films were obtained by deposition at room temperature followed by annealing at 400°C. Magnetic tunnel junctions using Fe₂CrSi show a tunnelling magnetoresistance (TMR) of 2.5%. The low TMR is ascribed to the oxidation of Fe₂CrSi at the interface with MgO. An enhancement of TMR to 8.1% was achieved by inserting a 0.3nm Mg between Fe₂CrSi and MgO to prevent the oxidation of Fe₂CrSi.

Keywords

annealing; chromium alloys; epitaxial growth; iron alloys; magnetic epitaxial layers; magnetic tunnelling; metallic epitaxial layers; oxidation; silicon alloys; surface morphology; tunnelling magnetoresistance; Fe₂CrSi; TMR; annealing; epitaxially grown films; heusler alloy; magnetic properties; magnetic tunneling junctions; microstructural properties; oxidation; structural properties; surface morphology; temperature 293 K to 298 K; temperature 400 degC; tunneling magnetoresistance; Annealing; Films; Magnetic tunneling; Metals; Oxidation; Temperature measurement; Tunneling magnetoresistance; Fe2CrSi; Heusler alloy; MTJ; TMR; half metal;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466002

Filename

6466002