Trap exploration of ZnO-based resistance switching memory devices

Author

Fu-Chien Chiu ; Wen-Yuan Chang ; Peng-Wei Li ; Chih-Chi Chen ; Wen-Ping Chiang

Author_Institution

Dept. of Electron. Eng., Ming-Chuan Univ., Taoyuan, Taiwan

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

234

Lastpage

235

Abstract

The trap exploration of Pt/ZnO/Pt memory cells was made. Based on the temperature dependence of I-V characteristics, the conduction mechanisms in ZnO films are dominated by the hopping conduction and ohmic conduction in high-resistance state (HRS) and low-resistance state (LRS), respectively. Simulation results show that the trap spacing and trap energy level in HRS are around 2 nm and 0.46 eV, respectively. Also, the Fermi level, the electron mobility, and the effective density of states in conduction band in LRS in ZnO films are extracted.

Keywords

Fermi level; platinum; random-access storage; zinc compounds; Fermi level; HRS; I-V characteristics; LRS; Pt-ZnO-Pt; RRAM; conduction band; effective density of states; electron volt energy 0.46 eV; high-resistance state; hopping conduction; low-resistance state; memory cells; ohmic conduction; resistance random access memory; temperature dependence; trap energy level; trap exploration; trap spacing; Current density; Electron mobility; Electron traps; Energy states; Materials; Temperature dependence; Zinc oxide; ZnO; resistive switching; trap spacing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466008

Filename

6466008