Title :
The side effects and the effects of thickness of source/drain fin on P-Type FinFET devices
Author :
Hsin-Chia Yang ; Wei-Yen Peng ; Wen-Shiang Liao ; Guo-Wei Wu ; Cheng-Yu Tsai ; Mu-Chun Wang ; Sung-Ching Chi ; Shea-Jue Wang
Author_Institution :
Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan
Abstract :
The 3-D structural fin-like channels of FinFET suppress the leakage current as the sizes of devices get substantially shrunk. In this study, the fin-thickness effects on the electrical performances are mainly observed. Two different kinds of thickness (namely, 110nm, and 120nm) with the same channel length (0.1 micron) are put into comparison. The phosphorus implants of the same dose with different energies for N-well threshold voltage adjustment are also taken into account.
Keywords :
MOSFET; etching; ion implantation; leakage currents; phosphorus; electrical performances; leakage current; p-type FinFET devices; phosphorus implants; side effects; source/drain fin; thickness; threshold voltage adjustment; Conferences; FinFETs; Implants; Leakage current; Logic gates; Performance evaluation; Threshold voltage; 3-D structure; FinFET Devices; Leakage current; Over Etching); Over Exposure;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6466012
