Robust nitrogen plasma immersion ion implantation treatment on gadolinium oxide resistive switching random access memory

In this paper, we demonstrate gadolinium oxide RRAM with nitrogen plasma immersion ion implantation (PIII) treatment technique at first time. For nitrogen plasma treatment, the nitrogen ions were incorporated with gadolinium oxide. We controlled the implantation voltage that the nitrogen ions exist near the surface of gadolinium oxide and it was forming a Gd_xO_yN_z layer. This can reduce the leakage current to reach a low current and power consumption operation. In addition, the retention and endurance characteristics were also improved.