DocumentCode :
597607
Title :
Robust nitrogen plasma immersion ion implantation treatment on gadolinium oxide resistive switching random access memory
Author :
Yu-Ren Ye ; Ying-Huei Wu ; Jer-Chyi Wang ; Chao-Sung Lai
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2013
fDate :
2-4 Jan. 2013
Firstpage :
300
Lastpage :
302
Abstract :
In this paper, we demonstrate gadolinium oxide RRAM with nitrogen plasma immersion ion implantation (PIII) treatment technique at first time. For nitrogen plasma treatment, the nitrogen ions were incorporated with gadolinium oxide. We controlled the implantation voltage that the nitrogen ions exist near the surface of gadolinium oxide and it was forming a GdxOyNz layer. This can reduce the leakage current to reach a low current and power consumption operation. In addition, the retention and endurance characteristics were also improved.
Keywords :
gadolinium compounds; leakage currents; nitrogen; plasma immersion ion implantation; power consumption; random-access storage; switching; GdxOyNz; current consumption; gadolinium oxide resistive switching random access memory; implantation voltage; leakage current; power consumption; robust nitrogen plasma immersion ion implantation treatment; Electrodes; Ions; Nitrogen; Plasma immersion ion implantation; Resistance; Switches; RRAM; gadolinium; nitrogen plasma; oxynitride; plasma immersion ion implantation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
ISSN :
2159-3523
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
Type :
conf
DOI :
10.1109/INEC.2013.6466029
Filename :
6466029
Link To Document :
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