Indium phosphide (InP) colloidal quantum dot based light-emitting diodes designed on Flexible PEN substrate

Author

Yohan Kim ; Greco, T. ; Ippen, C. ; Wedel, Andreas ; Jiwan Kim

Author_Institution

Flexible Display Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

425

Lastpage

427

Abstract

Quantum dot light-emitting diodes (QD-LEDs) using InP/ZnSe/ZnS muitishell colloidal quantum dots (QDs) which were prepared by simple heating-up method were designed on polyethylene naphthalate (PEN) substrate for rugged optoelectronic device. The synthesized InP/ZnSe/ZnS multishell QDs exhibited an emission peak at 545 nm for clear green color with a full-width at half-maximum (FWHM) of 50 nm, and photoluminescent (PL) quantum yield (QY) of 45%. The maximum luminance and current efficiency of InP based QD-LEDs fabricated on PEN substrate reached 640 cd/m² and 1.0 cd/A.

Keywords

III-V semiconductors; brightness; colloidal crystals; indium compounds; light emitting diodes; photoluminescence; semiconductor quantum dots; zinc compounds; InP-ZnSe-ZnS; QD-LED; current efficiency; flexible PEN substrate; heating-up method; indium phosphide colloidal quantum dot; light-emitting diodes; luminance; photoluminescent quantum yield; polyethylene naphthalate; rugged optoelectronic device; wavelength 545 nm; Indium phosphide; Indium tin oxide; Light emitting diodes; Performance evaluation; Quantum dots; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466067

Filename

6466067