Title :
Modeling of the nipip HIT structure with the hole thermionic emission mechanism
Author :
Hsiao, H.-T. ; Kuo, T.-Y. ; Lin, Chia-Hung
Author_Institution :
Dept. of Opto-Electron. Eng., Nat. Dong Hwa Univ., Hualien, Taiwan
Abstract :
We will show the current-voltage behaviors and band diagrams of HIT cells with and without hole thermionic emission model. When the hole thermionic emission model is not included, only drift diffusion model is used. In such a case, the calculated current would be much larger than the practical value.
Keywords :
solar cells; thermionic emission; HIT cells; band diagrams; current-voltage behaviors; drift diffusion model; hole thermionic emission mechanism; hole thermionic emission model; nipip HIT structure; Conferences; Current density; Educational institutions; Heterojunctions; Nanoelectronics; Photovoltaic cells; Thermionic emission;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6466068
