Title :
Design guidelines for (111) Si inclined nanohole arrays in thin film solar cells
Author :
Lei Hong ; Rusli ; Xincai Wang ; Hongyu Zheng ; Hao Wang ; Hongyu Yu
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
In this paper, a systematic design and analysis of slanting silicon nanohole structure is simulated using the finite element method. The slanting nanohole structure is based on the Si (111) wafer. The impact of the hole diameter and structural periodicity has been investigated. It is found that the absorption is significantly enhanced due to the strong light trapping ability of slanting nanohole structure. The optimal structural parameters are achieved when the periodicity is 700 nm and the diameter to periodicity ratio is 0.85. The highest ultimate efficiency achieved is 32.9%, higher than that of vertical nanohole structure with a value of 29.7%.
Keywords :
absorption; elemental semiconductors; finite element analysis; silicon; solar cells; FEM; Si; absorption; design guidelines; efficiency 32.9 percent; finite element method; hole diameter; light trapping ability; nanohole arrays; optimal structural parameters; periodicity ratio; slanting nanohole structure; structural periodicity; thin film solar cells; Absorption; Conferences; Decision support systems; Nanoelectronics; light absorption; silicon nanohole; ultimate efficiency and scattering;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6466069