Luminescence properties of cerium doped silicon nitride with MgO additive

Author

Ma, Y.Y. ; Xiao, Feng ; Ye, Sheng ; Zhang, Q.Y.

Author_Institution

State Key Lab. of Luminescence Mater. & Devices, South China Univ. of Technol., Guangzhou, China

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

459

Lastpage

462

Abstract

This work focuses on the luminescent materials Si₃N₄:Ce³⁺ with magnesium oxide additive prepared by the solid-state reaction method. The detailed phase formation was investigated based on X-ray diffraction profiles. The photoluminescence (PL) and photoluminescence excitation (PLE) spectra, the decay lifetime depend on the concentration of doped-Ce³⁺ ion and MgO additive were investigated. The emission intensity was effectively enhanced approximately 18.7 times ascribing to MgO additive. Si₃N₄:Ce³⁺ phosphor shows good absorption in ultraviolet (UV) region and emits broad blue emission, which can be used as a potential candidate for application in phosphor-converted light emitting diodes (LEDs).

Keywords

X-ray diffraction; cerium; magnesium compounds; phosphors; photoluminescence; silicon compounds; ultraviolet spectra; Si₃N₄:Ce-MgO; X-ray diffraction; blue emission; cerium doped silicon nitiride; emission intensity; luminescence properties; luminescent materials; magnesium oxide additive; phase formation; phosphor; photoluminescence excitation spectra; solid-state reaction method; ultraviolet spectra; Conferences; Decision support systems; Electronic mail; Nanoelectronics; White LEDs; additive; photoluminescence; silicon nitride;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466077

Filename

6466077