Title :
Luminescence properties of cerium doped silicon nitride with MgO additive
Author :
Ma, Y.Y. ; Xiao, Feng ; Ye, Sheng ; Zhang, Q.Y.
Author_Institution :
State Key Lab. of Luminescence Mater. & Devices, South China Univ. of Technol., Guangzhou, China
Abstract :
This work focuses on the luminescent materials Si3N4:Ce3+ with magnesium oxide additive prepared by the solid-state reaction method. The detailed phase formation was investigated based on X-ray diffraction profiles. The photoluminescence (PL) and photoluminescence excitation (PLE) spectra, the decay lifetime depend on the concentration of doped-Ce3+ ion and MgO additive were investigated. The emission intensity was effectively enhanced approximately 18.7 times ascribing to MgO additive. Si3N4:Ce3+ phosphor shows good absorption in ultraviolet (UV) region and emits broad blue emission, which can be used as a potential candidate for application in phosphor-converted light emitting diodes (LEDs).
Keywords :
X-ray diffraction; cerium; magnesium compounds; phosphors; photoluminescence; silicon compounds; ultraviolet spectra; Si3N4:Ce-MgO; X-ray diffraction; blue emission; cerium doped silicon nitiride; emission intensity; luminescence properties; luminescent materials; magnesium oxide additive; phase formation; phosphor; photoluminescence excitation spectra; solid-state reaction method; ultraviolet spectra; Conferences; Decision support systems; Electronic mail; Nanoelectronics; White LEDs; additive; photoluminescence; silicon nitride;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6466077
