Next promising P-Type FinFET devices without or with cobalt-silicide applied to the gate

Author

Hsin-Chia Yang ; Guo-Wei Wu ; Wen-Shiang Liao ; Wei-Yen Peng ; Sung-Ching Chi ; Mu-Chun Wang ; Shea-Jue Wang

Author_Institution

Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

486

Lastpage

488

Abstract

The leakage current is suppressed on 3-D structural fin-like channels of FinFET as the sizes of devices get substantially shrunk. The devices with channel width/length (0.12μm/ 0.10μm) are focused on and the baseline device is taken to be 15KeV phosphorous ions (the precursor PH₃) for N-well Vt implant and heavily doped poly-silicon for the gate. One is thus intrigued in what if the Vt implant energy is changed to 20KeV or the gate poly-silicon is fully replaced with cobalt silicide.

Keywords

MOSFET; cobalt compounds; leakage currents; 3D structural fin-like channels; N-well Vt implant; P-type FinFET devices; cobalt-silicide; electron volt energy 15 keV; electron volt energy 20 keV; gate poly-silicon; heavily doped poly-silicon; leakage current; phosphorous ions; size 0.10 mum; size 0.12 mum; Cobalt; FinFETs; Implants; Logic gates; Performance evaluation; Silicides; Threshold voltage; CoSi2 silicide; fully silicide; threshold voltage); work function;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466085

Filename

6466085