The improvement of MOSFET electric characteristics through strain engineering by refilled SiGe as Source and Drain

Strained Engineering including both global and local strains effectively enhances the mobility of carriers, in which global strains are generated by the mismatching of lattice constants at the junction of Si and Si_0.775Ge_0.225 and local strains are aroused by Source/Drain refilled with SiGe. In this paper, junction breakdown voltage, punch-through voltage, and the variation of threshold voltages are to be determined. Strained and non-strained devices are also put in comparison. It is then concluded that the strained engineering technique works promisingly for meeting the requirements of next generation devices.