The improvement of MOSFET electric characteristics through strain engineering by refilled SiGe as Source and Drain

Author

Hsin-Chia Yang ; Jie-Min Yang ; Wen-Shiang Liao ; Mu-Chun Wang ; Shea-Jue Wang ; Chun-Wei Lian ; Chao-Wang Li ; Chong-Kuan Du

Author_Institution

Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

489

Lastpage

491

Abstract

Strained Engineering including both global and local strains effectively enhances the mobility of carriers, in which global strains are generated by the mismatching of lattice constants at the junction of Si and Si_0.775Ge_0.225 and local strains are aroused by Source/Drain refilled with SiGe. In this paper, junction breakdown voltage, punch-through voltage, and the variation of threshold voltages are to be determined. Strained and non-strained devices are also put in comparison. It is then concluded that the strained engineering technique works promisingly for meeting the requirements of next generation devices.

Keywords

Ge-Si alloys; MOSFET; carrier mobility; electric breakdown; MOSFET electric characteristics; SiGe; carrier mobility; global strain; junction breakdown voltage; local strain; punch-through voltage; strain engineering; threshold voltage variation; Junctions; MOSFET circuits; Performance evaluation; Silicon; Silicon germanium; Strain; Threshold voltage; Mobility; SiGe-Refilled Source/Drain); Strained Engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466086

Filename

6466086