Title :
Study on the characterizations and applications of the pH-Sensor with GZO/glass extended-gate FET
Author :
Jung-Lung Chiang ; Chia-Yu Kuo
Author_Institution :
Dept. of Electron. Eng., Chung Chou Univ. of Sci. & Technol., Yuanlin, Taiwan
Abstract :
The GZO thin films of the thickness about 200~250nm were deposited on the glass which used as a pH sensor head based on the extended-gate field-effect transistor (EGFET) by r. f. sputtering system in this study. The pH sensing characteristics of the GZO/glass EGFET sensing structure were investigated and a semiconductor parameter analyzer (Keithley 4200) was used to measure the drain-source current versus gate-source voltage curves in various buffer solutions. In the experimental results, it can be obtained that the various pH sensitivities of the GZO pH-EGFET at different measuring temperature ambiance. Furthermore we also found that the pH sensitivity is increasing with temperature increased, and the pH response is a good linearity in this study. In addition, the GZO thin film was found that the resistance was about 8.37×10-3Ω-cm and the average of transmittance was about 80% in the visible range.
Keywords :
chemical sensors; field effect transistors; gadolinium compounds; glass; pH measurement; semiconductor thin films; sputter deposition; GZO thin films; GZO-glass EGFET sensing structure; Gd2Zr2O7; RF sputtering system; drain source current; extended gate field effect transistor; gate source voltage curves; pH response; pH sensitivity; pH sensor; semiconductor parameter analyzer; size 200 nm to 250 nm; Glass; Logic gates; Plasma temperature; Sensitivity; Temperature measurement; Temperature sensors; EGFET; GZO; Sensitivity; pH-sensor;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6466089
