Title :
Characteristics of Al-doped ZnO nanorods synthesized by the hydrothermal process at Low temperature
Author :
Jung-Lung Chiang ; Sui-Chu Tsai
Author_Institution :
Dept. of Electron. Eng., Chung Chou Univ. of Sci. & Technol., Yuanlin, Taiwan
Abstract :
In this study, the Al-doped ZnO (AZO) nanorods were synthesized on silicon substrate by the hydrothermal process. The SiO2/silicon substrate was submerged horizontally in 0.06M mixture solution of zinc nitrate hexahydrate (Zn(NO3)2·6H2O), diethylenetriamine (DETA), and doped the solution of aluminium nitrate, nonahydrate (Al(NO3)3·9H2O) at about 90°C for 4h. It has been shown that the ZnO nanorods are of single hexagonal phase of wurtzite structure. SEM image revealed that the range of diameter of ZnO nanorods about 83 ~ 425 nm. In addition, the ZnO nanorods/Si2O/Si structure was utilized as a pH sensor head to immerse into various pH buffer solutions. Experimental results were found that the Al-doped ZnO nanorods have a pH response. Afterwards, the sensor head will be designed the extended-gate field-effect transistor (EGFET) to study the pH-sensing characteristics in the different pH buffer solutions.
Keywords :
II-VI semiconductors; aluminium; chemical sensors; field effect transistors; liquid mixtures; nanofabrication; nanorods; nanosensors; organic compounds; pH measurement; scanning electron microscopy; wide band gap semiconductors; zinc compounds; EGFET; SEM image; SiO2-Si; ZnO:Al; aluminium nitrate; diethylenetriamine; extended-gate field-effect transistor; hydrothermal process; mixture solution; nanorod synthesis; nonahydrate; pH buffer solutions; pH sensor; silicon substrate; single hexagonal phase; time 4 h; wurtzite structure; zinc nitrate hexahydrate; Nanostructured materials; Silicon; Substrates; Temperature; Zinc oxide; Al-doped ZnO; nanorods; pH-sensing; synthesized;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6466090
