Title :
Characterizing, modeling, and simulating soft error susceptibility in cell-based designs in highly scaled technologies
Author :
Li, Y.F. ; Li, Meng ; Schrimpf, J.R.D. ; Fleetwood, D.M.
Author_Institution :
Platform Design Autom. Inc., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A systematic flow is described for characterizing, modeling, and simulating single event transient-induced soft errors in cell-based designs. Pulse broadening effects are quantified for a 65 nm CMOS process.
Keywords :
CMOS integrated circuits; circuit simulation; integrated circuit modelling; logic circuits; logic design; radiation hardening (electronics); CMOS process; cell-based design; highly scaled technology; pulse broadening effect; single event transient-induced soft error; size 65 nm; soft error susceptibility; systematic flow; Boolean functions; Data structures; Delay; Inverters; Logic gates; Pulse measurements; SPICE;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466673
