A K-Band low phase noise GaAs HBT VCO

Author

Yuan Peng ; Hong-Liang Lu ; Yu-Ming Zhang ; Yi-Men Zhang

Author_Institution

Sch. of Microelectron., Xidian Univ., Xi´´an, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

A K-Band low phase noise voltage controlled oscillator (VCO) using balanced π-feedback with 1-um GaAs heterojunction bipolar transistor (HBT) process is reported in this paper. In this VCO, phase noise is -116.0 dBc/Hz at 1 MHz offset and tuning frequency is from 19.62 to 20.23 GHz. The differential outputs are also provided from the VCO due to the use of balanced π-feedback. The overall dc power consumption of the VCO is 90 mW with a supply voltage of 6 V.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave oscillators; phase noise; voltage-controlled oscillators; GaAs; K-band low-phase noise HBT VCO; balanced π-feedback; frequency 1 MHz; frequency 19.62 GHz to 20.23 GHz; gallium arsenide HBT process; heterojunction bipolar transistor process; power 90 mW; size 1 mum; voltage 6 V; voltage controlled oscillator; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Phase noise; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6466692

Filename

6466692