Title :
Multipeak negative differential resistance effects in nanocrystalline Si stacking MOS structures
Author :
Xin-Ye Qian ; Kun-Ji Chen ; Jian Huang ; Yue-Fei Wang ; Zhong-Hui Fang ; Jun Xu ; Xin-Fan Huang
Author_Institution :
State Key Lab. of Solid State Microstructures, Nanjing Univ., Nanjing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The nanocrystalline Si quantum dot (nc-Si QD) stacking MOS structure is fabricated by plasma-enhanced chemical vapor depositon (PECVD). Negative differential resistance (NDR) characteristics are investigated in the nc-Si quantum dot floating gate MOS structure. Clear multi NDR peaks for electrons and holes are observed in the I-V curves and calculations indicate that these NDR characteristics should be associated to Coulomb blockade effect and quantum confinement effect of the nc-Si quantum dots.
Keywords :
Coulomb blockade; elemental semiconductors; nanoelectronics; nanostructured materials; plasma CVD; semiconductor quantum dots; silicon; Coulomb blockade effect; NDR characteristics; PECVD; Si; multipeak negative differential resistance effects; nanocrystalline silicon quantum dot stacking MOS structures; nc-silicon QD stacking MOS structure; nc-silicon quantum dot floating gate MOS structure; negative differential resistance characteristics; plasma-enhanced chemical vapor depositon; quantum confinement effect; Charge carrier processes; Delay; Energy states; Logic gates; Potential well; Silicon; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466697
