The development of nanometer solid state storage memory

Based on the single electron tunneling and storage in an uniform nc-Si single layer within a-SiN_x (or a-SiO_x) / nc-Si/a-SiN_x (or a-SiO_x) structures, the nc-Si floating gate nonvolatile memories (NVM) have been fabricated. The performance of the program and erase speed as well as the retention time have been improved by using the nitrogen plasma treatments. In order to increase the storage density, the double level charge storage has been realized in the stacked nc-Si layer based MIS structures. Considering the scaling limit of charge storage in nc-Si NVM, the Si high-rich SiO_x based electrically switchable resistance random access memory (RRAM) has been investigated. The mechanism of electrically switchable resistance in Pt/SiO_x/Pt structure has been also discussed.