Heavy-ion-induced permanent damage in ultra-deep submicron fully depleted SOI devices

In this paper, heavy-ion-induced permanent damage in fully depleted silicon-on-insulator (FD SOI) devices are investigated. After exposure to heavy ions, the characteristics degradation of FD SOI nMOSFET are presented, which is due to the microdose effect in the oxide layer and the displacement damage in silicon film. Besides, the measured results also exhibit strong device geometry dependence. The electrical properties degradation such as the off-state leakage current and the on-state current become more serious with the gate length or gate width decreasing, which indicates that the heavy-ion-induced damage in ultra-deep submicron FD SOI devices can not be ignored and should be paid more attention for radiation hardened applications.