Title :
Compact modeling for gate-all-around nanowire tunneling FETs (GAA NW-tFETs)
Author :
Zhiping Yu ; Ling Li ; Li Zhang ; Jinyu Zhang
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A compact model for gate-all-around (GAA) nanowire tunneling FETs (NW-tFETs) is developed based on ballistic transport and charge balancing approaches. To account for the carrier injection to the channel from source/drain (S/D) regions for NW FETs, the density-of-states (DOS) charge, which results in the so-called quantum capacitance, is introduced and augmented to include tunneling phenomenon. A complete large-signal equivalent circuit is proposed for the first time, including the doping effects in S/D regions. Preliminary results from comparison of model prediction and numerical device simulation show the correctness of the modeling methodology.
Keywords :
ballistic transport; equivalent circuits; field effect transistors; nanowires; numerical analysis; semiconductor device models; tunnelling; DOS charge; GAA NW-tFET; S-D region; ballistic transport; carrier injection; charge balancing approach; density-of-state charge; doping effect; gate-all-around nanowire tunneling FET; large-signal equivalent circuit; numerical device simulation; quantum capacitance; source-drain region; FETs; Logic gates; Numerical models; Quantum capacitance; Semiconductor device modeling; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466744