Title :
Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET
Author :
Yijiao Wang ; Xiaoyan Liu ; Yunxiang Yang ; Jieyu Qin ; Gang Du ; Jinfeng Kang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The electrostatic crosstalk in the 3D vertical CTM (Charge Trapping Memory) NAND NVM is investigated with various typical operation conditions. The junctionless FET of GAA (Gate-All-Around) nanowire with O/N/O (Oxide/Nitride/Oxide) dielectrics is simulated as the storage cell. The electrostatic properties of two neighbor cells of a NAND string are evaluated under typical conditions corresponding to the program operation. The results are help to design and optimize the new structures of 3D CTM NAND Flash.
Keywords :
NAND circuits; crosstalk; electron traps; electrostatics; field effect transistors; flash memories; nanowires; 3D CTM NAND flash; 3D vertical NAND charge trapping memory; NAND NVM; NAND string; electrostatic crosstalk; field effect transistors; gate-all-around nanowire; junctionless GAA nanowire FET; nonvolatile memory; storage cell; Crosstalk; Electric fields; Electron traps; Electrostatics; Logic gates; Threshold voltage; Very large scale integration;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466747
