Title :
Searching for the optimal materials for phase change random access memories
Author :
Ming-Hsiu Lee ; Raoux, S. ; Huai-Yu Cheng ; Hsiang-Lan Lung ; Chung Lam
Author_Institution :
Emerging Central Lab., Macronix Int. Co., Ltd., Hsinchu, Taiwan
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
This paper discusses several key items needed to be considered for phase change random access memory applications from material selection points of view, which include data retention, write speed, cycling endurance, and fabrication process. Various characterization skills were used to probe the properties of the materials, which help to evaluate the feasibility for applying them in future products.
Keywords :
phase change memories; cycling endurance; data retention; fabrication process; material selection; optimal materials; phase change random access memories; write speed; Computer architecture; Films; Phase change materials; Phase change random access memory; Temperature; Thermal stability;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467607
