• DocumentCode
    598296
  • Title

    A fully integrated 0.35μm SiGe power amplifier design

  • Author

    Qiong Yan ; Lin Hua ; Chun-Qi Shi ; Run-Xi Zhang ; Zong-Sheng Lai

  • Author_Institution
    Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A fully integrated high-linearity power amplifier targeting 5.5GHz is implemented in 0.35μm SiGe BiCMOS technology. The presented power amplifier schematic has a two-stage single-ended common-emitter structure with 3.3V voltage supply. The measured maximum output power can reach 16.52dBm, and the PAE is 17.45% at P1dB.
  • Keywords
    BiCMOS analogue integrated circuits; Ge-Si alloys; power amplifiers; BiCMOS technology; SiGe; efficiency 17.45 percent; frequency 5.5 GHz; fully integrated high-linearity power amplifier design; maximum output power; power amplifier schematic; size 0.35 mum; two-stage single-ended common-emitter structure; voltage 3.3 V; BiCMOS integrated circuits; Heterojunction bipolar transistors; Inductors; Metals; Power amplifiers; Power generation; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6467612
  • Filename
    6467612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=598296