Title :
A fully integrated 0.35μm SiGe power amplifier design
Author :
Qiong Yan ; Lin Hua ; Chun-Qi Shi ; Run-Xi Zhang ; Zong-Sheng Lai
Author_Institution :
Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A fully integrated high-linearity power amplifier targeting 5.5GHz is implemented in 0.35μm SiGe BiCMOS technology. The presented power amplifier schematic has a two-stage single-ended common-emitter structure with 3.3V voltage supply. The measured maximum output power can reach 16.52dBm, and the PAE is 17.45% at P1dB.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; power amplifiers; BiCMOS technology; SiGe; efficiency 17.45 percent; frequency 5.5 GHz; fully integrated high-linearity power amplifier design; maximum output power; power amplifier schematic; size 0.35 mum; two-stage single-ended common-emitter structure; voltage 3.3 V; BiCMOS integrated circuits; Heterojunction bipolar transistors; Inductors; Metals; Power amplifiers; Power generation; Silicon germanium;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467612
