Investigations of fin vertical nonuniformity effects on junctionless multigate transistor

The characteristics of junctionless multigate transistor (JMT) with fin vertical nonuniformity are investigated using three-dimensional simulation for the first time. The results show that the electrical characteristics, such as on-state current (I_on), subthreshold swing (SS) and drain induced barrier lowering (DIBL) effect, are affected by the sidewall angle (θ). The more superior SS and DIBL features also with smaller fluctuations have been observed in JMTs as compared with inversion-mode multigate MOSFETs (IM-MuGFETs). Hence, JMT is beneficial to suppress the short channel effects in the scaled devices.