A novel recessed-channel tu nneling FET design with boosted drive current and suppressed leakage current

Author

Wei Wang ; Song-Gan Zang ; Xi Lin ; Xiao-Yong Liu ; Qing-Qing Sun ; Peng-Fei Wang ; Zhang, David Wei

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, we propose a recessed-channel (U-shape-channel) tunneling field-effect-transistor (TFET) for 16-nm technology applications. This new device structure has the advantages of boosted I_on and suppressed I_off compared to the planar bulk-Si TFETs. Using Sentaurus TCAD simulations, it is found that the recessed channel will enlarge the tunneling area which will greatly enhance the drive current. Meanwhile, a steeper subthreshold swing (SS) will be realized in the U-shape TFET.

Keywords

circuit simulation; elemental semiconductors; field effect transistors; leakage currents; silicon; technology CAD (electronics); tunnel transistors; tunnelling; Sentaurus TCAD simulations; Si; U-shaped channel TFET; boosted drive current; planar bulk-silicon TFET; recessed channel; recessed-channel tunneling FET design; recessed-channel tunneling field-effect-transistor; size 16 nm; steeper subthreshold swing; suppressed leakage current; tunneling area; Doping; FETs; Integrated circuit modeling; Leakage current; Logic gates; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467618

Filename

6467618