DocumentCode
598303
Title
Quality improvement of IDSS in deep trench superjunction power VDMOSFET
Author
Yung-Cheng Wang ; Zeng-Yi Fan ; Liang Yao ; Fei Wang ; Chao-Yang Zhang ; Liao, Shengcai ; Po Li ; Yi-Ping Huang
Author_Institution
Dept. of Microelectron., Fudan Univ., Shanghai, China
fYear
2012
fDate
Oct. 29 2012-Nov. 1 2012
Firstpage
1
Lastpage
3
Abstract
In this paper, new physical structure and electrical characteristics of deep trench superjunction power VDMOSFET were introduced comparing with traditional multiple epitaxy process. New deep trench process brought higher IDSS leakage in the wafer center, design and process improvements were implemented to achieve positive results.
Keywords
isolation technology; power MOSFET; semiconductor device reliability; semiconductor junctions; IDSS leakage; deep trench process; deep trench superjunction power VDMOSFET; electrical characteristics; epitaxy process; physical structure; quality improvement; wafer center; Epitaxial growth; Filling; Fluid flow; Lattices; Power MOSFET; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4673-2474-8
Type
conf
DOI
10.1109/ICSICT.2012.6467623
Filename
6467623
Link To Document