Title :
Catastrophic failure of silicon power MOS in space
Author :
Galloway, Kenneth F.
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The physical models for the SEB and SEGR failure mechanisms of vertical power MOSFETS are reviewed, the vulnerability of new and advanced power MOSFET designs to these space-based failure mechanisms are discussed, and concerns about testing methodology for these catastrophic single-event effects are identified.
Keywords :
elemental semiconductors; failure analysis; power MOSFET; radiation effects; silicon; SEB failure mechanisms; SEGR failure mechanisms; Si; catastrophic failure; catastrophic single-event effects; physical models; power MOSFET designs; silicon power MOS; single-event burnout; single-event gate rupture; space-based failure mechanisms; testing methodology; vertical power MOSFET; Failure analysis; Logic gates; MOSFETs; Radiation effects; Silicon; Space vehicles;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467626
