• DocumentCode
    598321
  • Title

    A self-rectifying and forming-free HfOx based-high performance unipolar RRAM

  • Author

    Yu, H.Y. ; Tran, X.A.

  • Author_Institution
    South Univ. of Sci. & Technol. of China, Shenzhen, China
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We report a forming-free and self-rectifying unipolar HfOx based RRAM with high performance. Highlight of the demonstrated RRAM include 1) Fab-available materials and CMOS process, 2) excellent self-rectifying behavior in LRS (>103@ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices.
  • Keywords
    CMOS memory circuits; hafnium compounds; random-access storage; CMOS process; HfO; fab-available materials; forming-free unipolar resistive switching; high density cross point memory devices; high performance unipolar RRAM; read-out margin; self-rectifying behavior; Electrodes; Films; Hafnium compounds; Nickel; Silicon; Switches; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6467660
  • Filename
    6467660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=598321