DocumentCode
598327
Title
Potential and drain current modeling of surrounding gate MOSFET including polysilicon depletion
Author
Zunchao Li ; Jinpeng Xu ; Liangliang Zhang ; Lili Zhang
Author_Institution
Dept. of Microelectron., Xi´´an Jiaotong Univ., Xi´´an, China
fYear
2012
fDate
Oct. 29 2012-Nov. 1 2012
Firstpage
1
Lastpage
3
Abstract
The potential drop in the polysilicon depletion layer cannot be neglected in the modeling of the nanoscale MOSFET. A continuous potential model and a potential-based drain current model taking into account the polysilicon depletion effect are developed for the fully depleted nanoscale surrounding gate MOSFET. The performance of the derived analytical models are verified with numerical simulation.
Keywords
MOSFET; electric potential; nanoelectronics; semiconductor device models; continuous potential model; drain current modeling; fully depleted nanoscale surrounding gate MOSFET; polysilicon depletion; potential based drain current model; potential drop; Analytical models; Electric potential; Logic gates; MOSFET circuits; Nanoscale devices; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4673-2474-8
Type
conf
DOI
10.1109/ICSICT.2012.6467679
Filename
6467679
Link To Document