Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism

Author

Xing Zhou ; Junbin Zhang ; Syamal, Binit ; Ben Chiah, Siau ; Hongtao Zhou ; Li Yuan

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents the unified regional modeling (URM) approach to developing a compact model (CM) for GaN-based high electron mobility transistors (HEMTs) based on the two-dimensional electron gas (2DEG) and drift-diffusion (DD) formalism. It is shown that through the URM of the 2DEG based on triangular well approximation and surface-potential based DD transport, a CM for generic metal-insulator-semiconductor (MIS) HEMTs can be developed, which is scalable over device physical and structural parameters.

Keywords

III-V semiconductors; approximation theory; gallium compounds; high electron mobility transistors; wide band gap semiconductors; 2DEG; CM; DD formalism; GaN; HEMT; MIS; URM approach; compact model; drift-diffusion formalism; generic metal-insulator-semiconductor; high electron mobility transistors; surface-potential based DD transport; triangular well approximation; two-dimensional electron gas; unified regional modeling; Gallium nitride; HEMTs; Logic gates; MODFETs; Mathematical model; Numerical models;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467682

Filename

6467682