Title :
A novel low power wide supply voltage range CMOS temperature sensor with ‒0.2/0.5°C error from −20°C to 60°C
Author :
Gang Chen ; Xiaoyong Xue ; Qing Dong ; Fanjie Xiao ; Hao Chen ; Yinyin Lin
Author_Institution :
ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
This paper proposes a quite accurate CMOS temperature sensor designed and developed for monitoring enviromental temperature. The sensor uses subthreshold MOSFET to measure temperature. The circuit has been implemented by IO thick-oxide MOS devices in 0.13um standard logic process and occupies a silicon area of 37×41um2. The performance of the sensor is highly linear and the temperature error is merely °0.2 °C/0.5°C using two-point calibration from °20°C to 60 °C. The sensor can operate under voltage from 1.8V to 3.6V with high PSRR. Test results show a responsivity of 3.9 mV/°C and power consumption of 1.3uW@1.8V.
Keywords :
CMOS integrated circuits; MOSFET; calibration; low-power electronics; temperature sensors; IO thick-oxide MOS devices; PSRR; environmental temperature monitoring; low power wide supply voltage range CMOS temperature sensor; power 1.3 muW; power consumption; size 0.13 mum; standard logic process; subthreshold MOSFET; temperature -0.2 degC; temperature -20 degC to 60 degC; temperature 0.5 degC; two-point calibration; voltage 1.8 V to 3.6 V; CMOS integrated circuits; Calibration; Power demand; Standards; Substrates; Temperature measurement; Temperature sensors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467694
