Title :
A short-contacted double anodes IGBT
Author :
Weizhong Chen ; Bo Zhang ; Zehong Li ; Min Ren ; Zhaoji Li
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A short contacted double anodes insulated-gate bipolar transistor (DA-IGBT) and its analytic model are proposed. The second anode P2 is introduced above the metal which suppresses the snapback effectively in its on-state characteristics. Due to its double anodes it shows extraordinary high emission efficiency. As simulation results show, the VF is 1.84v at 100A/cm2, which is decreased by 13% and 23% than those of the Segment Anode IGBT (SA-NPN, 2.1v) and the Short-Anoded IGBT (2.4v), respectively. At off-state, the narrow channel sandwiched between the double anodes can extract the excessive carriers effectively. A shorter turn-off time of 700ns is achieved, which is decreased by 22% and 15% compared to the SA-NPN IGBT (900ns) and the Short-Anoded IGBT (830ns), respectively.
Keywords :
insulated gate bipolar transistors; semiconductor device models; SA-NPN IGBT; emission efficiency; insulated gate bipolar transistor; on-state characteristics; segment anode IGBT; short-anoded IGBT; short-contacted DA-IGBT; short-contacted double-anode IGBT; snapback suppression; time 700 ns; time 830 ns; time 900 ns; voltage 1.84 V; voltage 2.1 V; voltage 2.4 V; Anodes; Doping; Equations; Equivalent circuits; Insulated gate bipolar transistors; Metals; Resistance;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467705
