Understanding effect of additives in copper electroplating filling for through silicon via

3D integration with TSVs (Through Silicon Via) is emerging as a promising technology for the next generation integrated circuits. Copper electroplating is one of the key technologies to fabricate TSVs. In this paper, void-free TSV filling was achieved using methanesulfonic based electrolyte and mushroom-like copper overburden was used as bumps after tin deposition. Effect of additives and current density in copper electroplating nucleation and filling profile was investigated. An absorption-diffusion model was employed to explain the experimental results.