Title :
Thermal stress characteristics and reliability impact on 3-D ICs containing through-silicon-vias
Author :
Tengfei Jiang ; Suk-Kyu Ryu ; Qiu Zhao ; Im, Jay ; Ho-Young Son ; Kwang-Yoo Byun ; Rui Huang ; Ho, Paul S.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Thermal stresses in TSV structures have been measured using micro-Raman spectroscopy and precision wafer curvature technique as a function of temperature and during thermal cycling. The results were verified by finite element analysis (FEA) to characterize the thermomechanical behavior of the TSV structures. An initial nonlinear curvature behavior was observed and was attributed to grain growth, which was followed by a linear and reversible behavior. The impact of thermal stresses on the keep-out zone (KOZ) for devices near the TSVs was investigated.
Keywords :
Raman spectroscopy; finite element analysis; integrated circuit reliability; thermal stresses; three-dimensional integrated circuits; 3D IC; FEA; finite element analysis; initial nonlinear curvature behavior; keep-out zone; linear behavior; microRaman spectroscopy; precision wafer curvature technique; reliability impact; reversible behavior; thermal cycling; thermal stress characteristics; thermomechanical behavior; through-silicon-vias; Silicon; Stress; Stress measurement; Temperature measurement; Thermal loading; Through-silicon vias;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467715
