DocumentCode :
59836
Title :
Radiation Effects in Flash Memories
Author :
Gerardin, Simone ; Bagatin, Marta ; Paccagnella, Alessandro ; Grurmann, Kai ; Gliem, F. ; Oldham, T.R. ; Irom, Farokh ; Nguyen, Duc N.
Author_Institution :
Dipt. di Ing. dell´Inf., Univ. di Padova, Padua, Italy
Volume :
60
Issue :
3
fYear :
2013
fDate :
Jun-13
Firstpage :
1953
Lastpage :
1969
Abstract :
We review ionizing radiation effects in Flash memories, the current dominant technology in the commercial non-volatile memory market. A comprehensive discussion of total dose and single event effects results is presented, concerning both floating gate cells and peripheral circuitry. The latest developments, including new findings on the mechanism underlying upsets due to heavy ions and destructive events, are illustrated.
Keywords :
flash memories; ion beam effects; random-access storage; ίoating gate cells; destructive events; flash memories; heavy ions; ionizing radiation effects; nonvolatile memory market; peripheral circuitry; single event effects; total dose effects; Arrays; Flash memories; Logic gates; Nonvolatile memory; Programming; Radiation effects; Threshold voltage; Flash memories; floating gate (FG); single event functional interrupts (SEFI); single event upset (SEU); soft errors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2013.2254497
Filename :
6515709
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=59836
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