• DocumentCode
    59836
  • Title

    Radiation Effects in Flash Memories

  • Author

    Gerardin, Simone ; Bagatin, Marta ; Paccagnella, Alessandro ; Grurmann, Kai ; Gliem, F. ; Oldham, T.R. ; Irom, Farokh ; Nguyen, Duc N.

  • Author_Institution
    Dipt. di Ing. dell´Inf., Univ. di Padova, Padua, Italy
  • Volume
    60
  • Issue
    3
  • fYear
    2013
  • fDate
    Jun-13
  • Firstpage
    1953
  • Lastpage
    1969
  • Abstract
    We review ionizing radiation effects in Flash memories, the current dominant technology in the commercial non-volatile memory market. A comprehensive discussion of total dose and single event effects results is presented, concerning both floating gate cells and peripheral circuitry. The latest developments, including new findings on the mechanism underlying upsets due to heavy ions and destructive events, are illustrated.
  • Keywords
    flash memories; ion beam effects; random-access storage; ίoating gate cells; destructive events; flash memories; heavy ions; ionizing radiation effects; nonvolatile memory market; peripheral circuitry; single event effects; total dose effects; Arrays; Flash memories; Logic gates; Nonvolatile memory; Programming; Radiation effects; Threshold voltage; Flash memories; floating gate (FG); single event functional interrupts (SEFI); single event upset (SEU); soft errors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2013.2254497
  • Filename
    6515709
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=59836