DocumentCode
598360
Title
Gap fill capability of Ni PVD based on silicide-last process
Author
Shu-Juan Mao ; Jun Luo ; Jiang Yan
Author_Institution
Inst. of Microelectron., Beijing, China
fYear
2012
fDate
Oct. 29 2012-Nov. 1 2012
Firstpage
1
Lastpage
3
Abstract
A NiSi silicide-last process is proposed for the application of high-k & metal gate integration scheme in this paper. Contact holes with aspect ratios varying from 0.3 to 2.3 are fabricated. Profiles of Ni films sputtered in contact holes with different aspect ratios are checked by cross-sectional scanning electron microscopy (SEM). After silicidation, the as-formed NiSi on the top of contact holes are also systematically characterized by cross-sectional SEM.
Keywords
CMOS integrated circuits; high-k dielectric thin films; nickel compounds; scanning electron microscopy; vapour deposition; CMOS technology; NiSi; PVD; contact holes; cross-sectional SEM; cross-sectional scanning electron microscopy; gap fill capability; high-k integration scheme; metal gate integration scheme; silicide-last process; Films; High K dielectric materials; Logic gates; Nickel; Scanning electron microscopy; Silicides; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4673-2474-8
Type
conf
DOI
10.1109/ICSICT.2012.6467733
Filename
6467733
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