Performance of pentacene thin film transistors fabricated with different deposition speeds

Bottom-gated pentacene thin film transistors have been fabricated with different deposition speeds and the devices´ current-voltage properties are reported. The pentacene films are formed through evaporation in low pressure. The characteristics of the surface morphologies and microstructures of the samples were studied respectively. We also studied the transfer characteristics and output properties. Pentacene-TFTs can exhibit excellent electrical properties while V_g changes from 0 to -70V, and I_on/I_off ratio is larger than 10⁴ and OFF-state current is smaller than -1.3×10^-10A as V_d=-100V.