A GaN-based metal-semiconductor-metal planar inter-digitated varactor

Author

Chun-Yan Jin ; Jin-yan Wang ; Min Fang ; Jin-Bao Cai ; Yang Liu ; Zhen Yang ; Bo Zhang ; Wen-Gang Wu ; Jin-Cheng Zhang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, a GaN-based metal-semiconductor-metal planar inter-digitated varactor is analyzed. The quality factor of the inter-digitated varactor with finger width of 0.25μm and space between fingers of 7μm on sapphire is 31.9 at 100MHz, and the tunable capacitance ranges fro m 0.19pF to 0.89pF. The characteristics of this varactor with different finger´s widths and spaces are analyzed. It is shown that the maximum capacitance depends on the total area of fingers and the minimum capacitance lies on fingers´ width and the space between fingers. When either width or space is fixed, the minimum capacitance decreases with the increase of the other one.

Keywords

varactors; GaN; capacitance 0.19 pF to 0.89 pF; frequency 100 MHz; metal semiconductor metal planar interdigitated varactor; quality factor; sapphire; size 0.25 mum; tunable capacitance; Aluminum gallium nitride; Capacitance; Fingers; Gallium nitride; HEMTs; MODFETs; Varactors; GaN; compatible process; inter-digitated varactor;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467746

Filename

6467746