Title :
The characteristics of ZrO2 charge trapping layers by nitrogen incorporation in nonvolatile memory applications
Author :
Chyuan-Haur Kao ; Chih-Ju Lin ; Hsin-Yuan Wang ; Szu-Chien Chen
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In the study, the MOHOS-type memory using ZrO2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900°C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.
Keywords :
electron traps; nitrogen; random-access storage; rapid thermal annealing; zirconium compounds; MOHOS type memory; ZrO2; charge loss; charge trapping layers; data retention; memory device performance; nonvolatile memory; rapid thermal annealing; temperature 900 degC; Annealing; Charge carrier processes; Films; Nitrogen; Rough surfaces; Surface roughness; Zirconium;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467750
