DocumentCode :
598374
Title :
A new stretched-exponential model for NBTI effects in pMOSFETs
Author :
Jian-Min Cao ; Wei He ; Xiao-Jin Zhao
Author_Institution :
Coll. of Electron. Sci. & Technol., Shenzhen Univ., Shenzhen, China
fYear :
2012
fDate :
Oct. 29 2012-Nov. 1 2012
Firstpage :
1
Lastpage :
3
Abstract :
Negative bias temperature instability (NBTI) has greatly limited the lifetimes for product lifetime. Traditional degradation models, such as the classic reaction-diffusion (R-D) model, stretched-exponential (S-E) model and R-D saturated model, have been proposed to quantitatively describe it. In this paper, we use both analytical formulations as well as numerical solutions to explore the relations among these models. In addition, we propose a new S-E model for H2 diffusion. Compared to the previous S-E model, our proposed S-E model, with high accuracy approximation to the R-D model, can be used to explain the NBTI saturation and lower degradation exponent, and is more suitable for the applications of integrated circuit simulation and analysis.
Keywords :
MOSFET; hydrogen; numerical analysis; H2; NBTI effects; R-D saturated model; S-E model; analytical formulations; degradation models; integrated circuit simulation; negative bias temperature instability saturation; numerical solutions; pMOSFET; product lifetime; reaction-diffusion model; stretched-exponential model; Abstracts; Decision support systems; Nickel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
Type :
conf
DOI :
10.1109/ICSICT.2012.6467759
Filename :
6467759
Link To Document :
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