Title :
Spintronic devices: From memory to memristor
Author :
Hai Li ; Zhenyu Sun ; Xiuyuan Bi ; Wysocki, B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Polytech. Inst. of New York Univ., Brooklyn, NY, USA
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
This paper provides a broad overview of spintronic devises with emphasis on memory and spintronic memristive systems. The operational fundamentals of spintronic devices are presented, followed by brief descriptions of magnetic tunneling junctions (MTJs), spin torque transfer RAM (STT-RAM), and spintronic memristors. Examples of spintronic applications in computing systems are given comprising multi-level cells (MLCs) and the design of a novel memristor based temperature sensor.
Keywords :
magnetic tunnelling; magnetoelectronics; memristors; random-access storage; temperature sensors; MLC; MTJ; STT-RAM; magnetic tunneling junctions; memristor based temperature sensor; multilevel cells; spin torque transfer RAM; spintronic devices; spintronic memristors; Magnetic tunneling; Magnetization; Magnetoelectronics; Memristors; Random access memory; Resistance; Temperature sensors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467793
