DocumentCode
598397
Title
III-V MOSFETs: From planar to 3D
Author
Gu, J.J. ; Ye, Peide D.
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2012
fDate
Oct. 29 2012-Nov. 1 2012
Firstpage
1
Lastpage
4
Abstract
We have demonstrated non-planar 3D InGaAs MOSFETs including InGaAs HFinFETs, InGaAs-on-nothing nanowire MOSFETs and InGaAs gate-all-around nanowire MOSFETs. The InGaAs GAA FETs show the best electrostatic control and is the most promising candidate for future high-speed low-power logic applications.
Keywords
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; nanowires; GAA FET; HFinFET; III-V MOSFET; InGaAs; InGaAs-on-nothing nanowire; electrostatic control; gate-all-around nanowire; high-speed low-power logic applications; nonplanar 3D MOSFET; Aluminum oxide; Etching; Fabrication; Indium gallium arsenide; Indium phosphide; Logic gates; MOSFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4673-2474-8
Type
conf
DOI
10.1109/ICSICT.2012.6467810
Filename
6467810
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