Title :
III-V MOSFETs: From planar to 3D
Author :
Gu, J.J. ; Ye, Peide D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
We have demonstrated non-planar 3D InGaAs MOSFETs including InGaAs HFinFETs, InGaAs-on-nothing nanowire MOSFETs and InGaAs gate-all-around nanowire MOSFETs. The InGaAs GAA FETs show the best electrostatic control and is the most promising candidate for future high-speed low-power logic applications.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; nanowires; GAA FET; HFinFET; III-V MOSFET; InGaAs; InGaAs-on-nothing nanowire; electrostatic control; gate-all-around nanowire; high-speed low-power logic applications; nonplanar 3D MOSFET; Aluminum oxide; Etching; Fabrication; Indium gallium arsenide; Indium phosphide; Logic gates; MOSFETs;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467810
