Title :
The influence of silicide technique on the device performance for deep sub-micro pMOSFETs
Author :
Yi-Ming Liao ; Xiao-Li Ji ; Jian-Guang Chang ; Chun-Bo Wu ; Feng Yan ; Yi Shi
Author_Institution :
Inst. of Electron. Sci. & Eng., Nanjing Univ., Nanjing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
We investigate the junction leakage current and device performance for 45nm SiGe/Si pMOSFETs using various silicide technology. It is found that with the conventional Ni silicide method, the leakage current of a SiGe/Si junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method. In addition, Si-cap methods show the best current voltage characteristic for MOSFETs. The characteristic improvement could be associated with the suppression of the agglomeration of the Ni germano-silicide film. Our results show the novel Ni silicide method using a Si cap is the most promising choice for SiGe junctions in advanced technology.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; leakage currents; nickel; semiconductor junctions; silicon; silicon compounds; tunnelling; NiSi-SiGe; Si; SiGe-Si; agglomeration suppression; band-to-band tunneling; best current voltage characteristics; cap layer; deep submicro pMOSFET; device performance; generation-recombination process; junction leakage current; leakage contributors; leakage current; silicide technique; silicon-cap methods; size 45 nm; Junctions; Leakage current; MOSFETs; Nickel; Silicides; Silicon; Silicon germanium; S/D junction; Si-cap layer; SiGe; drain current; leakage; pre-amorphization-implantation (PAI);
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467833
