DocumentCode :
598405
Title :
Fabrication and characterization of a block-oxide source/drain-tied poly-Si TFT with additional poly-Si body
Author :
Yi-Chuen Eng ; Jyi-Tsong Lin ; Yi-Hsuan Fan
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear :
2012
fDate :
Oct. 29 2012-Nov. 1 2012
Firstpage :
1
Lastpage :
3
Abstract :
In this paper, we propose a new block-oxide source/drain-tied (BOSDT) poly-Si TFT in which the additional poly-Si body (APSB) is created when the device isolation process is done after the source/drain implantation and dopant activation. For the first time, according to our results, the APSB is confirmed to have the ability to circumvent the SCEs and leakage current. Furthermore, the output characteristics of a poly-Si TFT with APSB demonstrate that the self-heating is absent because the SDT structure is presented. Although the excellent performance expected theoretically (SCEs, leakage current, self-heating) cannot be achieved well, the intrinsic functions are still present. And, more importantly, the APSB scheme can be realized through the simple isolation-last process. It is believed that after the process and the structure geometry are optimized, the values of the BOSDT-APSB could be obtained.
Keywords :
elemental semiconductors; leakage currents; silicon; thin film transistors; APSB scheme; BOSDT; SCE; SDT structure; Si; additional poly-Si body; block-oxide source-drain-tied poly-Si TFT; device isolation process; dopant activation; intrinsic functions; isolation-last process; leakage current; self-heating; source-drain implantation; structure geometry; Current measurement; Electric fields; Fabrication; Leakage current; Logic gates; Performance evaluation; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
Type :
conf
DOI :
10.1109/ICSICT.2012.6467842
Filename :
6467842
Link To Document :
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