Fabrication and characterization of a block-oxide source/drain-tied poly-Si TFT with additional poly-Si body

In this paper, we propose a new block-oxide source/drain-tied (BOSDT) poly-Si TFT in which the additional poly-Si body (APSB) is created when the device isolation process is done after the source/drain implantation and dopant activation. For the first time, according to our results, the APSB is confirmed to have the ability to circumvent the SCEs and leakage current. Furthermore, the output characteristics of a poly-Si TFT with APSB demonstrate that the self-heating is absent because the SDT structure is presented. Although the excellent performance expected theoretically (SCEs, leakage current, self-heating) cannot be achieved well, the intrinsic functions are still present. And, more importantly, the APSB scheme can be realized through the simple isolation-last process. It is believed that after the process and the structure geometry are optimized, the values of the BOSDT-APSB could be obtained.