Title :
Channel length-dependent parasitic bipolar transistor effect in Poly-Si TFTs considering traps at grain boundary
Author :
Liu, Tony Chi ; Kuo, J.B. ; Shengdong Zhang
Author_Institution :
Sch. of Inf. Eng., Peking Univ., Shenzhen, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
This paper reports channel length-dependent parasitic bipolar transistor (PBT) effect in Poly-Si TFTs considering traps at grain boundary. As verified by the experimentally measured data and simulation results, due to impact ionization (II), the PBT´s current gain is large when the channel length is small at a low drain bias; but independent of the channel length at a high drain bias. The trap density at grain boundary affects strongly the channel length-dependent floating-body effect of the poly-si TFTs.
Keywords :
bipolar transistors; elemental semiconductors; grain boundaries; impact ionisation; silicon; thin film transistors; PBT; Si; channel length-dependent floating-body effect; channel length-dependent parasitic bipolar transistor effect; grain boundary trap density; impact ionization; polySi TFT; Bipolar transistors; Current measurement; Gain measurement; Grain boundaries; Integrated circuits; Simulation; Thin film transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467845
