DocumentCode :
598443
Title :
12 GHz monolithic double-balanced down converter in 65 nm CMOS
Author :
Rui Guan ; Tingting Mo ; Dongpo Chen ; Xiaoyong Li
Author_Institution :
Center for Analog/RF Integrated Circuits (CARFIC), Shanghai Jiao Tong Univ., Shanghai, China
fYear :
2012
fDate :
Oct. 29 2012-Nov. 1 2012
Firstpage :
1
Lastpage :
3
Abstract :
This paper presents a 12 GHz monolithic double-balanced down conversion mixer with IF buffer in a 65 nm CMOS technology. The mixer down converts the input signal at 12 GHz to IF frequency and together with the IF buffer achieves a conversion gain of 27.5 dB with ±0.6 dB variation across over 1 GHz band. The simulated in-band noise figure (NF) is about 14.6 dB and the in-band output third-order intercept point (OIP3) is about 6 dBm. The proposed down converter consumes 16 mA from a 1.2 V supply voltage. The die area of the whole circuit is only 0.2×0.22 mm2.
Keywords :
CMOS integrated circuits; buffer circuits; convertors; mixers (circuits); monolithic integrated circuits; CMOS technology; IF buffer; NF; OIP3; current 16 mA; frequency 12 GHz; gain -6 dB to 6 dB; in-band noise figure; in-band output third-order intercept point; mixer; monolithic double-balanced down converter; size 65 nm; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Gain; Impedance matching; Mixers; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
Type :
conf
DOI :
10.1109/ICSICT.2012.6467909
Filename :
6467909
Link To Document :
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