Title :
An analytical threshold voltage model of strained surrounding-gate MOSFETs
Author :
Yao Liu ; Zunchao Li
Author_Institution :
Dept. of Microelectron., Xi´´an Jiaotong Univ., Xi´´an, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Based on the comprehensive energy band structure of the strained-silicon and solving the 2D Poisson equation of the potential distribution in the channel, an analytical threshold voltage model of the strained surrounding-gate nMOSFET is developed. The dependence of the threshold voltage on the gate length, channel doping concentration and Ge content of the relaxed SiGe is studied using the model. The derived model shows good agreement with the numerical simulation.
Keywords :
Ge-Si alloys; MOSFET; Poisson equation; numerical analysis; semiconductor doping; 2D Poisson equation; SiGe; analytical threshold voltage model; channel doping concentration; channel potential distribution; comprehensive energy band structure; gate length; numerical simulation; strained surrounding-gate nMOSFET; strained-silicon; Doping; Logic gates; MOSFETs; Semiconductor device modeling; Semiconductor process modeling; Silicon; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467930
