An overview of challenges and current status of Si-based terahertz monolithic integrated circuits

Author

Jae-Sung Rieh ; Yongho Oh ; Daekeun Yoon ; Namhyung Kim ; Dong-Hyun Kim ; Jongwon Yun ; Hyunchul Kim ; Kiryong Song

Author_Institution

Sch. of Electr. Eng., Korea Univ., Seoul, South Korea

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

4

Abstract

Challenges in the implementation of THz circuits based on Si-based technologies such as Si CMOS and SiGe HBT technologies are overviewed in this paper. Major challenges described in this work include the operation speed of Si devices, loss of Si substrate, model accuracy, uncertainty in EM simulation, and the presence of dummy patterns. Possible techniques to partly circumvent the challenges are also discussed. A review of recently reported Si-based circuits operating beyond 100 GHz is provided.

Keywords

CMOS integrated circuits; Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; monolithic integrated circuits; silicon; EM simulation; Si; Si CMOS; Si devices; Si substrate; Si-based technology; SiGe HBT technology; THz circuits; terahertz monolithic integrated circuit; CMOS integrated circuits; Integrated circuit modeling; Oscillators; Semiconductor device modeling; Silicon; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467961

Filename

6467961