Title :
Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance
Author :
Schwank, James R. ; Shaneyfelt, Marty R. ; Dodd, Paul E.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
This document describes the radiation environments, physical mechanisms, and test philosophies that underpin radiation hardness assurance test methodologies. The natural space radiation environment is presented, including the contributions of both trapped and transient particles. The effects of shielding on radiation environments are briefly discussed. Laboratory radiation sources used to simulate radiation environments are covered, including how to choose appropriate sources to mimic environments of interest. The fundamental interactions of radiation with materials via direct and indirect ionization are summarized. Some general test considerations are covered, followed by in-depth discussions of physical mechanisms and issues for total dose and single-event effects testing. The purpose of this document is to describe why the test protocols we use are constructed the way they are. In other words, to answer the question: “Why do we test it that way”?
Keywords :
integrated circuits; ionisation; proton effects; shielding; indirect ionization; integrated circuits; microelectronic devices; physical mechanisms; radiation environments; radiation hardness assurance testing; shielding effects; test philosophies; test protocols; Earth; Ions; Laboratories; Materials; Protons; Space vehicles; Enhanced low dose rate sensitivity; hardness assurance; interaction of radiation with materials; preirradiation elevated temperature stress; single-event effects; single-event gate burnout; single-event gate latchup; single-event gate rupture; single-event upset; space radiation environment; total ionizing dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2254722