Title :
Through silicon via impact on above BEoL Time Dependent Dielectric Breakdown
Author :
Frank, Timo ; Chery, E. ; Chappaz, C. ; Arnaud, Laurent ; Anghel, Lorena
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
The impact of Through Silicon Via (TSV) on above BEoL dielectric reliability is studied. Time Dependent Dielectric Breakdown (TDDB) is performed on copper dual damascene combs, fabricated in a 65 nm technology node with a SiOCH low-k dielectric, and designed above 10μm diameter and 80μm thick TSVs, processed through a via-middle approach.
Keywords :
copper; electric breakdown; integrated circuit reliability; low-k dielectric thin films; silicon compounds; three-dimensional integrated circuits; BEoL dielectric reliability; BEoL time dependent dielectric breakdown; Cu; SiOCH; TDDB; TSV; copper dual damascene combs; low-k dielectric thin film; size 65 nm; through silicon via impact; via-middle approach; Dielectric breakdown; Dielectrics; Reliability; Silicon; Stress; Through-silicon vias;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4673-2749-7
DOI :
10.1109/IIRW.2012.6468916
