DocumentCode
598746
Title
A method for low-K dielectric breakdown physical localization
Author
Chery, E. ; Federspiel, Xavier ; Beylier, G. ; Volpi, F. ; Chaix, J.
Author_Institution
STMicroelectron., Crolles, France
fYear
2012
fDate
14-18 Oct. 2012
Firstpage
119
Lastpage
121
Abstract
This paper reports results obtained on a new test structure developed to easily locate low-k dielectric breakdown spots. This spot can be localized by using a comb-serpentine test structure, and by monitoring the change in resistance between pads.
Keywords
electric breakdown; low-k dielectric thin films; comb-serpentine test structure; low-k dielectric breakdown physical localization method; low-k dielectric breakdown spot location; Dielectrics; Electric breakdown; Metals; Reliability; Resistance; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location
South Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4673-2749-7
Type
conf
DOI
10.1109/IIRW.2012.6468934
Filename
6468934
Link To Document